Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures
This work explores the
temperature dependent heterojunction behavior of -type zinc oxide (ZnO) nanorods/ diodes. The as-grown ZnO nanorod structures on ZnO coated substrates are single crystalline and grown along the  direction. The diode showed an excellent stability over the temperature range of due to highly doped -type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from . The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported.
This work is supported by the BK21 project-2007 and the Korea Research Foundation grant (KRF-2005-005-J07502) funded by the Korean government (MOEHRD) and the authors also acknowledge the KBSI, Jeonju center for the help of FE-SEM and AFM studies.